What is HJT Technology?
- HJT solar cells have double-sided structure design which can absorb incident light and scattered light from both sides, using a PECVD, very thin silicon intrinsic passivation layer and P-type silicon doped layer are formed on the top side of wafer-type monocrystalline silicon N after texturing and surface cleaning, then on the other side a very thin intrinsic silicon passive layer and N-type silicon doped layer is deposited.
- After deposition of amorphous silicon layer stacks, PVD magnetron sputtering coating technology is applied to deposit transparent oxide conductive film (TCo) and metal stack on both sides of the cells.
- Finally, the metal grids on both sides are formed by our innovative metallization technology.
Advantages of HJT Technology
- High efficiency
- Large size
- Low attenuation
- High double-sided ratio
- Less process
- Hinning
HJT Photovoltaic Modules
- Using a high efficiency heterojunction solar cell, up to more than 21.5% module efficiency.
- Leading Half-cut HJT cell technology.
- The more stable feed temperature coefficient of -0.24% results in a stable yield gain.
- Using N-type wafer, no LID caused by B-O pair
- Excellent PID resistance.
- The 85% double-sided factor brings greater yield gain from back to back.
Development Direction Of High Efficiency Solar Cell Industry
The HJT Technology Structure Diagram
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