Partnership Program

Since Waler Fuhs first proposed the HJT structure in 1974, combining amorphous silicon with crystalline silicon materials, the development of HJT cells has progressed steadily. In 1989, the Sanyo Group successfully developed HJT solar cells and filed a patent, achieving an efficiency of 15% at the time. By 1997, Sanyo registered the HJT trademark and began commercializing photovoltaic modules, marking a pivotal step in HJT’s early development.

After 2010, with Panasonic’s HJT patent expiration, other manufacturers started advancing this technology, pushing HJT solar panels into industrial production and continuously improving their conversion efficiency. In 2017, HJT solar panels officially entered the commercial phase, attracting more companies to join the industry and initiate small-scale production. With an increasing number of production lines exceeding 100 MW, the future of HJT technology appears highly promising.

In the HJT module, amorphous silicon is deposited onto an N-type silicon wafer substrate to create a heterojunction that acts as a passivation layer, enhancing open-circuit voltage and overall efficiency. The cell structure also includes an outer layer with a transparent conductive oxide (TCO) coating. The manufacturing process utilizes low-temperature techniques, with silver paste processing temperatures typically around 200°C. This enables the use of thinner N-type silicon wafers, presenting significant opportunities for future cost reductions.

In electronics, there’s a principle: fewer solder joints result in a lower failure rate. IBC cells eliminate solder joints on the front and utilize conductive adhesive on the back, reducing solder joints by over 80%. This design minimizes solder-related damages and significantly lowers the risk of poor soldering, enhancing reliability.