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The Difference Between Polysilicon And Monocrystalline Silicon Solar Panels

Posted on 2017-08-04 20:31:51 By Maysun Solar

Polysilicon is the direct raw material for the production of monocrystalline silicon, which is the basic material of electronic information for semiconductor devices such as contemporary artificial intelligence, automatic control, information processing, photoelectric conversion and so on. Known as the "cornerstone of the microelectronics building."

In the use of solar energy, monocrystalline silicon and polysilicon also play a huge role. Although the current terms, to make solar power has a larger market, the majority of consumers to accept, we must improve the efficiency of solar cell photoelectric conversion, reduce production costs. From the current development of international solar cells can be seen that the development trend of monocrystalline silicon, polysilicon, ribbon silicon, thin film materials (including microcrystalline silicon-based film, compound-based film and dye film).

From the industrial development point of view, the center of gravity has been from the single crystal to the direction of the development of polycrystalline, mainly due to; [1] can provide solar cell head and tail less and less; [2] for solar cells, More efficient, through the casting method and direct solidification method obtained by the direct acquisition of polycrystalline silicon square material; [3] polysilicon production process continues to progress, automatic casting furnace per production cycle (50 hours) can produce more than 200 kilograms of silicon ingots , The size of grain size to centimeter level; [4] due to nearly a decade of monocrystalline silicon technology research and development soon, which is also used in the production of polysilicon batteries, such as the choice of corrosion emission knot, back surface field, corrosive velvet Surface, body and body passivation, fine metal gate electrode, the use of screen printing technology can reduce the width of the gate electrode to 50 microns, the height of 15 microns or more, rapid thermal annealing technology for polysilicon production can greatly shorten the process time, The single piece of hot process time can be completed in less than one minute, using the process in the 100 square centimeter of the polysilicon chip to make the battery conversion efficiency of more than 14%. It is reported that the current 50 ~ 60 micron polysilicon substrate produced on the battery efficiency of more than 16%. The use of mechanical groove, screen printing technology in the 100 square centimeter polycrystalline efficiency of more than 17%, no mechanical groove in the same area on the efficiency of 16%, using buried gate structure, mechanical groove in the 130 square centimeters of polycrystalline Battery efficiency of 15.8%.